Abstract
Abstract Concentration profiles of 20 keV ion implanted antimony into silicon single crystals are measured by radio-activation analysis and the enhanced diffusion of antimony is observed. The concentration profiles and the diffusion coefficient of antimony are found to be independent of temperature over the range between 500 and 800°C during ion implantation. The enhancement of diffusion during annealing after room temperature ion implantation is the same as that during high temperature ion implantation. The diffusion coefficient is estimated to be 1.1 × 10−15 cm2/sec for diffusion during high temperature ion implantation and that during annealing after room temperature ion implantation. The measured concentration profiles agree very well with the calculated concentration profiles. These results are explained on the basis of a vacancy mechanism.
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