Quantitative analysis of the lattice reconstruction of ion-implanted SiC after visible light laser irradiation

Abstract

We report on a quantitative analysis of the effect of visible light laser irradiation (VLLI) on hexagonal (α) silicon carbide implanted with nitrogen and aluminum. In both cases of 4H and 6H polytypes we show that a short, but intense, irradiation with the 532 nm wavelength of a frequency-doubled neodymium: ytterbium aluminum garnet (Nd:YAG) laser results in a substantial reduction in the damage level produced by room temperature ion implantation. Up to now the recovery could not be made complete but, in the best conditions, it could reach ∼80% of the initial damage value. This is not enough to qualify VLLI as a full activation step but, rather, suggests to use it as a new processing tool in order to lower the constraints of high temperature ion implantation or, after implantation performed at room temperature, to reduce the total budget for high temperature annealing and activation steps.