Abstract
The formation of nickel silicides and vanadium silicides and the diffusion barrier effect of a vanadium layer in the formation of nickel silicides were studied for annealed metal films deposited on silicon substrates by depth profiling using secondary ion mass spectrometry and X-ray diffraction. Nickel films more than 2500 Å thick react with silicon after annealing at 400 °C for 30 min in a vacuum. A vanadium layer 250 Å thick between nickel and silicon shows a barrier effect in the nickel silicide formation after annealing at 400 °C for 30 min. The barrier effect of a vanadium layer 250 Å thick becomes imperfect after annealing at 500 °C for 30 min.
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