The current analysis of a single electron transistor based on double graphene nanoscroll island

Abstract

The single electron transistor (SET) is nanoscale device which operates fast based on tunneling of single electrons in potential barriers. It has low energy consumption, small size and simplified equivalent circuit. This transistor contains source, gate, drain electrodes and an island which is surrounded with three electrodes. The material of SET island affects on operation of this device therefore graphene as a famous carbon based material is selected for the island. Two islands comprised of graphene nanoribbon (GNR) and graphene nanoscroll (GNS) are chosen for SET. The GNS-SET has lower coulomb blockade region and coulomb diamond area than GNR-SET. Moreover the double GNR-SET and double GNS-SET are simulated and their charge stability diagrams are compared together. The result shows that double GNS-SET has lower zero current region and better operation than double GNR-SET. Therefore double GNS is selected for SET island and impact of important parameters on its current are comprehensively investigated. The increasing applied gate voltage, temperature, GNS length and GNS spiral length lead to current increase in double GNS-SET. Moreover, decreasing the number of turns for GNS increases the current in double GNS-SET. These parameters can be utilized for controlling and tunable current in double GNS SET.