An Analytical Approach for Current Modeling in a Single Electron Transistor (SET) Utilizing Graphene Nanoscroll (GNS) as the Island

Abstract

The single electron transistor (SET) as a nanoelectronic device can be realized by downward scaling based on Moore’s law. This aim can be achieved by utilizing graphene as one-dimensional material in SET structure. A variation of its shape as the rolling up nanoribbon into spiral is called graphene nanoscroll (GNS). Since the carrier mobility is a high value, single electrons can tunnel from source to drain electrode very fast. This, in turn has influence on the SET current and coulomb blockade (CB) range. The impact of GNS island is investigated by the current mathematical model on SET operation. In this research, effects of important parameters such as the island length and GNS spiral length are comprehensively studied. The obtained results show that increasing of these factors not only impacts on current directly but also reduces CB range. Vice versa, rising the GNS number of turns increases CB range and then reduces SET current. The ambient temperature and applied gate voltage play key roles so that their higher values result in higher current outside of CB range. These factors can adjust CB range and then GNS-SET current.