Current Analysis of Single Electron Transistor Based on Graphene Double Quantum Dots

Abstract

The single electron transistors (SETs) as low power devices are suitable candidates for nanoscale circuit in future technology. These nanoelectronic devices operate based on an electron tunneling. However, coulomb blockade effect prevents single electron transfer between island and coulomb barriers in some conditions. This phenomenon causes zero-conductance region in low bias that is operation limitation of SET. This problem can be solved by using multiple islands in SET structure which their materials are two dimensional carbon based materials such as graphene. Increasing the number of islands effects on probability of electron tunneling. This factor not only rises speed of electron transfer but also it can reduce gap conductance in SET. In this research, current of graphene double quantum dots SET is analyzed and modeled. Moreover effects of graphene length, applied gate voltage and temperature on current SET are investigated. Furthermore effect of number of islands on SET current is evaluated with comparison their charge stability diagrams which are results of SET simulation by software.