Abstract
We show a cross-sectional transmission electron microscopy (TEM) analysis of a single electron transistor (SET) composed of a nanogap electrode fabricated by atomic force microscope (AFM) local oxidation and a single self-assembled quantum dot (QD). The detail structure of SET is analyzed by using both TEM and in-situ energy dispersive X-ray spectroscopy (EDX) measurement. It demonstrates that after AFM lithography, the QD in the SET maintained its high crystal quality and without notable damage or oxidation. Our findings demonstrate the good controllability and reliability of the AFM local oxidation method for fabricating nanogap electrode on a single QD.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
