Abstract
Two theories of breakdown mechanism in silicon junction diodes have at present been advanced, avalanche and field emission, one by Zener and the other by Von Hippel and Frohlich. At various times physicists have supported one or the other of these theories operating independently, but the development of the low-voltage silicon reference diode has indicated that the two methods of breakdown can occur simultaneously. An explanation of the peculiar behaviour of the voltage/temperature coefficient of such diodes can be made by incorporating both breakdown mechanisms. It is shown that very-close-tolerance devices must be used in experimental work. Comparison of the breakdown theories with experimental results shows that the breakdown of diodes at voltages less than 4.5 volts is due to field emission, greater than 6.5 volts is due to avalanche effects, and between 4.5 and 6.5 volts is due to a combination of both effects. Confirmation of these results is made by noise measurements. A characteristic surface of temperature coefficient of breakdown voltage shows skew properties which suggests that a diode having zero temperature coefficient over a wide range cannot exist for the currents and voltages considered.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Proceedings of the IEE - Part B: Electronic and Communication Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
