Abstract
A new thermodynamical model has been proposed for active carbon incorporation from undissociated monomethylgallium (GaCH3) radicals in GaAs. The model predicts that the carbon concentration increases with methyl (CH3) radical concentration and supplying CH3 radicals suppresses dissociation of GaCH3 radicals. The prediction is clearly verified under a higher trimethylarsenic (TMAs)/trimethylgallium (TMG) flow ratio than a critical ratio. For example, heavily carbon-doped GaAs (more than 1020 cm−3) has been achieved even at high temperatures around 600°C by controlling the TMAs/TMG flow ratio. In contrast, the carbon concentration decreases with increasing TMAs/TMG flow ratio at lower TMAs/TMG flow ratios which is not predicted from the model. In this regime, most carbon atoms form micro-inclusions which are electrically inactive. A mechanism for the inactive carbon incorporation remains unclear.The present model and experimental findings provide a new key parameter to grow heavily carbon-doped GaAs at high growth temperature.
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