Abstract
A new model has been proposed for carbon doping from undissociated monomethylgallium (GaCH 3) radicals, which predicts that carbon concentration should depend on methyl (CH 3) radical concentration, as well as on growth temperature. Supply of CH 3 radicals suppresses GaCH 3 radical dissociation and results in heavy doping of carbon in GaAs. To control the CH 3 radical amount, trimethylarsenic (TMAs) is used, and the model is verified by controlling the ratio of trimethylgallium (TMG) to the TMAs sources. Heavy doping of carbon of 6X10 19 atoms/cm 3 is achieved even at temperatures as high as 650b3C. Our model provides another key parameter to control carbon doping besides growth temperature.
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