Abstract
The carbon and zinc incorporations in GaAs grown by low-pressure metalorganic chemical vapor deposition using triethylgallium as the gallium source have been studied. Carbon and zinc incorporations are identified by photoluminescence spectrum and Hall measurement. The carbon incorporation in undoped GaAs decreases as the growth temperature increases and can be explained by the dissociation effect of triethylgallium at high growth temperature. The zinc incorporation in p-type GaAs doped with diethylzinc also decreases with increasing growth temperature. It can be explained by a vacancy control model.
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