Abstract
Carbon incorporation in GaAs epitaxial layers grown by low pressure metalorganic chemical vapor deposition (MOCVD), using trimethylgallium (TMGa) as the gallium source and trimethylarsenic (TMAs) and AsH3 as the arsenic sources, has been studied over a wide range of growth parameters. Carbon incorporation is identified by secondary ion mass spectroscopy (SIMS), Hall measurement, and C-V analysis. Active carbon levels between 2 × 1015 cm-3 and 7 × 1020 cm-3 are obtained. The carbon incorporation is more sensitive to the partial pressure of TMGa than of TMAs in the growth temperature range 500 ~ 610° C. Carbon incorporation is increased as growth temperatures are decreased to 500° C for growth pressures near 10000 Pa. Results indicate that surface-adsorbed methyl radicals from the dissociation of TMGa controls carbon incorporation in this temperature range.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
