The calculation of secondary defect formation at ion implantation of silicon

Abstract

A model of secondary radiation damage accumulation during ion implantation is suggested. It is assumed that the dominating processes during radiation damage are the diffusion of simplest defects, their coagulation into complexes which are stable under implantation temperature, and capture of diffusing defects by traps. The dependence of the secondary complex concentration on the dose rate, target temperature, dose and the depth distribution of these complexes for different trap concentrations, and degrees of absorption of mobile defects at the surface of the crystal are derived. [Russian Text Ignored]