Abstract
Monitoring of low-dose arsenic or boron ion implantation (doses: 5*10/sup 10/ to 1*10/sup 13/ cm/sup -2/) in silicon, which is required for threshold voltage control of MOS transistors, is studied. The thermal-wave (TW) signal intensity decreases monotonically with decreasing dose. The lowest detection limit for As/sup +/ and B/sup +/ implantations is 5*10/sup 10/ and 1*10/sup 11/ cm/sup -2/, respectively. Correlation of the TW signal intensity versus damage density, TW intensity versus dose, and laser Raman intensity versus dose is obtained. The TW intensity is also correlated with the sheet conductance, and the threshold voltage of the transistor. Therefore, this technique is useful as a nondestructive, highly sensitive dose monitor for low-dose implantation to achieve tight threshold voltage control in MOS transistors. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
