Abstract
In this technical review, for the silicon Lateral Double-diffused MOSFET (LDMOS), the new technologies have been developed on the basis of several new lateral high-voltage devices designed by the authors. The new effects of the electric field modulation and charge shielding to the local electric fields have introduced to the silicon LDMOS. These new structures have improved the trade-off characteristic between the breakdown voltage and the on-resistance (R on). This review is the second part for the development summarization of the power semiconductor devices.
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