Radiation Effects in VLSI Circuits – Part I: Historical Perspective

Abstract

This review explains the historical perspective of single-event effects, single-event transitions, and single-event upsets. It delves into the concept of critical charge and offers a comprehensive classification of single-event upsets. The main aspects of this work involve an explanation of the root causes of soft errors in VLSI circuits. The primary source of radiation in the space environment is thoroughly analyzed, discussing particle generation and interactions. This examination includes the behavior of energetic alpha particles and their interactions in silicon, as well as the impact of high-energy neutrons and nuclear interactions in silicon. Additionally, the study presents a detailed exploration of soft error simulation and calculation methods, enabling the estimation of soft error rates (SERs) and mean time to failure (MTTF). The focus of this research is the investigation of soft errors in memory and sequential circuitry, demonstrating the potential risks posed by these errors in electronic systems. The findings of this research provide a valuable foundation for developing strategies to mitigate soft errors and enhance the reliability of VLSI circuits for space applications. To highlight understanding, we have ended most of the sections and subsections with the questions. These questions can help researchers explore related research directions.