Abstract
the scaling technique is used for improving the performance of semiconductor devices. MOSFET, SOI, and FinFET have reached their limits at the 5nm technology node and are affected by short channel effects, so a new device is proposed, which is the Nanosheet. In this paper, an investigation of the temperature effect on the performance of Single Nanosheet FET (SNSFET), Double Nanosheet FET (DNSFET), and Triple Nanosheet FET (TNSFET) from the 250k to 400k temperature range is performed. In this study, it is observed that OFF current is significantly increased and ON current has minute variation with temperature. A detailed DC analysis is performed, including ON to OFF current ratios and Subthreshold slope for all devices. In TNSFETs, the maximum ON to OFF current ratio and batter SS are observed.
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