Abstract
This paper explains the detailed structure as well as performance of DG-CNTFET (Double Gate Carbon Nanotube Field Effect Transistor) and its performance is compared with the DG-MOSFET (Double Gate Metal Oxide Semiconductor Field Effect Transistor). Various parameters like I-V characteristics, ON current, OFF current and ON to OFF current ratio have been evaluated using nano-TCAD ViDES. Also, the transport description of DG-MOSFET and DG-CNTFET has been described in detail. It has been observed that DG-CNTFET has lower OFF current and higher ON current in comparison to the DG-MOSFET. The higher ON current of DG-CNTFET depicts that it requires less time to turn on the device in comparison with DG-MOSFET. Also, OFF current of the DG-CNTFET is lesser as compared to MOSFET. The DG-CNTFET’s higher ON to OFF current ratio outperforms the DG-MOSFET in term of switching speed of the device. It is proposed that CNTFET can be used as an alternative of MOSFETs for high speed Integrated Circuit (IC) design.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of Engineering and Advanced Technology
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
