Threshold voltage modeling and performance comparison of a novel linearly graded binary metal alloy gate junctionless double gate metal oxide semiconductor field effect transistor

Abstract

Keeping pace with the current research trend dominated by development of junctionless devices, in this work, we have incorporated the innovative concept of work function engineering by continuous horizontal variation of mole fraction in a binary metal alloy gate into a junctionless double gate metal oxide semiconductor field effect transistor. We have thereby presented a new structure, a junctionless work function engineered gate double gate metal oxide semiconductor field effect transistor. A detailed analytical modeling of this novel transistor structure has been done based on the solution of two dimensional Poisson’s equation presenting a simplified expression for short channel threshold voltage. Based on analytical calculations, an overall performance comparison of junctionless work function engineered gate double gate and normal junctionless double gate metal oxide semiconductor field effect transistor has been investigated to establish the superiority of our proposed structure over its normal junctionless double gate counterpart in terms of reduced short channel effects, threshold voltage roll-off and drain induced barrier lowering.