Abstract
Synchrotron radiation (SR) irradiation effect in the Al thermal growth on a SiO 2 surface is studied by using a molecular-beam chemical vapor deposition (MB-CVD) technique. Al growth is observed only on the SR-irradiated area at 200°C. The substrate temperature dependence of the SR-assisted Al growth rate is found to be non-monotonous: it rises from 150°C to reach a peak at 250°C, then falls to reach a minimum at 300°C, and rises again over 300°C. The origins of this non-monotonous temperature dependence are investigated by chemical shifts analysis in Auger electron spectroscopy (AES). We find that the peculiar temperature dependence is attributed to the change of the chemical bonding nature of the initiation layers formed by SR irradiation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
