Abstract
The origins of synchrotron radiation (SR) irradiation effects, the growth suppression on a Si surface and the initiation on a SiO 2 surface, in the aluminum chemical vapor deposition (CVD) are revealed by the analysis of chemical shifts in Auger electron spectroscopy (ADS). The surface reaction control effect of SR irradiation is caused by a very thin (<2 nm) modified layer formed by SR-induced photochemical reaction: The suppression layer on a Si surface consists of aluminum carbide, and the initiation layer on a SiO 2 surface is composed of metallic Al including carbon and a metallic Si reduced from the SiO 2 surface.
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