Abstract
The growth control of Al on SiO 2 surfaces is studied using synchrotron radiation (SR) irradiation on molecular-beam chemical vapor deposition (CVD) with dimethylaluminum hydride (DMAH). The thermal CVD reaction is found to be initiated by the SR irradiation of the initial stage of the CVD. Once the CVD reaction is initiated, it continues even after the irradiation is stopped. This effect is caused by an initiation layer consisting of Al and C formed by SR-induced CVD. By using this initiation phenomenon, the projection patterning of Al is successfully demonstrated without conventional photolithography using photo-resist.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
