Abstract
The growth control of Al on SiO 2 surfaces is studied using synchrotron radiation (SR) irradiation on molecular-beam chemical vapor deposition (CVD) with dimethylaluminum hydride (DMAH). The thermal CVD reaction is found to be initiated by the SR irradiation of the initial stage of the CVD. Once the CVD reaction is initiated, it continues even after the irradiation is stopped. This effect is caused by an initiation layer consisting of Al and C formed by SR-induced CVD. By using this initiation phenomenon, the projection patterning of Al is successfully demonstrated without conventional photolithography using photo-resist.
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