Abstract
The influence of synchrotron radiation (SR) irradiation on the chemical vapor deposition (CVD) of dimethylaluminum hydride (DMAH) on a Si(100) surface carried out using a molecular-beam CVD technique is studied. The thermal CVD reaction is found to be suppressed almost completely by the SR irradiation. This suppression effect continues even after the irradiation is stopped. Auger analysis reveals that the surface composition of the irradiated area is changed to AIC, while pure aluminum is formed on the non-irradiated area. From these facts, we conclude that the suppression is caused by the very thin reaction blocking layer formed by SR-induced CVD. By using this suppression phenomenon, the inverse projection patterning of Al is successfully demonstrated without photolithography.
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