Abstract
The field emission properties of plasma-treated graphene films (PTGFs) have been investigated from 300 to 50 K. It is found that the turn-on field increases from 4 to 6.2 V/µm, and the current density decreases with decreasing temperature. On the basis of the semiconductor thermionic emission theory, the changes in field emission properties at low temperature can be successfully explained. The increase in interface barrier height at low temperature results in the changes in the field emission properties of PTGFs.
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