Abstract
This study investigates the effect of boron-incorporation (B-incorp) on SiO2 properties near the SiO2/4H-SiC interface by Fourier transforms infrared spectroscopy with attenuated total reflection mode. We focus on the range of Si–O–Si asymmetric stretching vibrations, whereas B-incorp samples exhibited a different peak shift trend compared to the thermal oxidized samples. The observed peak shift, corroborated by the calculated spectral simulation, suggests a reduction in oxygen deficiency near the interface for B-incorp samples. This suggests a potential link between B-incorp and the passivation of traps near the interface, possibly through its influence on SiO2 stoichiometry.
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