Abstract

Temperature dependence of the homogeneous line width has been investigated for the 5 D 0 – 7 F 0 transition of Eu 3+ doped in sodium aluminosilicate glass from 2 and 100 K by means of persistent spectral hole burning and fluorescence line narrowing. The homogeneous line width shows a linear T dependence between 2 and 10 K and a nearly T 2 dependence at T>10 K . Phonon-assisted tunneling of two-level systems (TLS) contributes to the optical dephasing at lower temperatures, while the Raman process of low-frequency phonons is dominant at higher temperatures.

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