Abstract
The ideal properties of ferroelectric material as data storage element have drawn much attention. Recent rapid advances of FRAM technology have demonstrated that FRAM has great possibility of memory application. However, in spite of the rapid progress in FRAM technology, FRAM devices can not compete with their counterparts of memory devices because they do not have cost-effectiveness. In this paper, current FRAM technology is firstly reviewed, and near future FRAM technology is discussed. Future FRAM technology is directed for highly cost-effective FRAM devices with suggestion of a candidate future FRAM technology.
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