Abstract
Current high density FRAM devices have been fabricated by developing several novel integration technologies such as capacitor technology and process technology. The process technology minimizes the integration degradation using stable BC scheme, encapsulating barrier layer (EBL), and effective etching curing process. The capacitor technology generates robust ferroelectric capacitors to be immune to any integration damage by taking advantage of new ferroelectric films and CVD deposition technique. Future FRAM technology will be focused on etchless scheme, nano-scale ferroelectric films, and three-dimensional capacitor scheme using CVD deposition techniques for noble metal electrode with excellent step coverage, which will produces high density 256 Mb FRAM and beyond.
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