Abstract
Current and future FRAM technologies are reviewed and discussed for developing high density FRAM devices as stand-alone memory application. In order to enter into mainstream of memory devices, FRAM devices should achieve such small cell size factor of ∼8F 2 , strong reliability, and design optimization. The low cell size factor can be realized by using etchless capacitor technology, ultra thin capacitor technology, and runner via technology. The reliability can be acquired by Pt-inserting technology. Finally, high density FRAM device can be accomplished by design optimization.
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