Abstract
In this paper, we investigated the double metal negative capacitance field-effect-transistor (DM NCFET) for improved digital and analog performance in comparison to the conventional negative capacitance field-effect-transistor (NCFET) by using a new concept of ferroelectric layer (HfO 2 FE). Visual TCAD software is used to design DM NCFET. The results have been analyzed in form of leakage current (I off ), transconductance (G m ), transconductance generation factor (TGF), Early Voltage (V EA ), intrinsic gain (A v ), unity gain cutoff frequency (f T ) and improved performance of output conductance (G d ), drain barrier induced lowering (DIBL), switching ratio I on / I off , subthreshold swing (SS). Thus, DM NCFET can be suitable for digital and analog circuit applications.
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