Abstract
In that work, we examined DM NCFETs (double metal negative capacitance field effect transistors) at better Linearity application in differentiate to the conventional device NCFETs through a recent thought of ferroelectric thick sheet (HfO<inf>2</inf>FE). Simulator of Visual TCAD is utilised to model NCFETs and DM NCFETs. The outcomes of DM NCFETs have been examined in the shape of transconductance (G<inf>m</inf>) enhanced by 9.0%, I<inf>off</inf> (leakage current) decreased by 47.0% over NCFETs, and enhanced execution of G<inf>d</inf> (output conductance), switching ratio I<inf>on</inf> / I<inf>off</inf>, drain barrier induced lowering (DIBL) lowered by 6.0% over NCFETs, subthreshold swing (SS) declined by 5.0% over NCFETs. We examined also the linearity parameters such as intrinsic delay (T<inf>i</inf>), second and third order of voltage intercept point (VIP2 and VIP3), third order inter modulation distortion (IMD3), third-order input intercept point (IIP3). Therefore, DM NCFETs could be applicable in digital and analog, linearity parameter circuit applications.
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