Synthesis of silicon carbonitride films by activation gas flow in laser power optical pulsating discharge plasma

Abstract

A new method has been developed for the plasmochemical deposition of hard protective silicon carbonitride coatings from a hexamethyldisilazane (HMDS) Si2NH(CH3)6 vapor and HMDS+ benzene activated by a powerful optic pulse discharge (POPD) in a high-velocity gas flow of argon. The method allows depositing silicon carbonitride coatings with a rate of 0.5−1.2 μm·min−1 that is (1−5)·102 times higher than in conventional CVD processes. It has been found that coating deposition rate and structure of coatings depend on the process parameters: flow rates of HMDS and HMDS+benzene and plasma generating gas (argon). The method allows depositing SiCN coatings containing Si–C, Si–N and Csp3–N bonds with high velocity and microhardness 24 GPa.