Abstract
The antimony doped indium selenide crystals have been grown using Direct Vapour Transport (DVT) technique. The compositional, morphological, structural and photoconductive properties of (Sb0.05In0.95)Se crystal has been characterized by EDAX, SEM, XRD and I-V measurement analysis respectively. SEM image shows that (Sb0.05In0.95)Se crystal has layer by layer growth. The photo-current of (Sb0.05In0.95)Se crystal was measured as a function of various illumination intensity of 50, 75, 100, and 125 mW/cm2. The photo-response parameters: photo-current, responsivity, specific detectivity, and external quantum efficiency EQE (%) have been estimated. The photo current at the termination of illumination (I0), probability of escape of an electron from the trap per second (p) and trap depth (Et) have been studied and determined by the growth decay curve. It depends upon illumination intensity of incident light source. These characteristics makes (Sb0.05In0.95)Se crystal suitable candidate for efficient photo-electric devices.
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