Abstract
Transition metal dichalcogenides have demonstrated tremendous potential for their applications in optoelectronic devices. The present work highlights the growth of pristine MoTe2 crystals by Direct Vapor Transport (DVT) technique and their application as photo detectors. The crystal composition is confirmed by EDAX and TEM analysis. The fabricated photodetector was tested under illumination of 670nm laser source and the effect of different biasing voltages were studied. Typical detector parameters such as photocurrent (Iph), photoresponsivity (Rλ), Detectivity (D), Sensitivity (S), rise time (τrise) and decay time (τdecay) were evaluated for the detector.
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