Growth and photo-response of NbSe2 and NbS2 crystals

Abstract

Transition metal dichalcogenides(TMDCs) have attracted intense research efforts due to their drastic properties change as we move towards ultra-thin crystalline layers from their bulk counterparts. Many well studied members of this family such as MoS2, WS2, WSe2, WS2 etc. have shown potential for flexible electronic devices including photovoltaic applications. The TMDCs like NbSe2 and NbS2 are relatively less studied layered compounds consisting of staked sandwiches of Se-Nb-Se/S-Nb-Se tri-layers with strong covalent/ionic intra layer bonds and weak Van der Waals interlayer interactions. In the present work, author have grown the crystals of NbSe2 and NbS2 by Direct Vapour Transport (DVT) technique and the material composition is confirmed using EDAX data. Photoelectrochemical (PEC) solar cell measurements are performed under monochromatic light illumination at different intensities and various solar cell parameters are calculated. These crystalline semiconductor electrodes were also analysed by photocurrent-voltage characteristics in a PEC solar cell structure (Cu/NbSe2/(0.1M K4Fe(CN)6 + 0.1M K3Fe(CN)6) and Cu/NbS2/(0.1M K4Fe(CN)6 +0.1M K3Fe(CN)6)). Blue coloured light gave the maximum efficiency. For further analysis of photodetection properties of the grown crystals, Ag painted broad low contact resistance electrical contacts were drawn from the crystals and its transient photoresponse was studied to evaluate different detector parameters.