Abstract
In modern technology, transparent conductive oxides play a critical role. One of the most popular transparent conductive oxides is indium tin oxide. However, due to its scarcity, indium is a costly metal. In this study, high temperature solid state reactions method was used to synthesize Sb+5/Mg+2 cosubstituted In2O3 transparent conductive oxide materials (Mg2X/3In2-XSbX/3O3 named MISO). By decreasing the indium ratio and substituting Sb+5/Mg+2, transparent conductive oxides with low costs were produced in this work, and the influence of the proportion of substituted material on the structural, electrical, and optical properties of indium oxide was examined with XRD, Hall measurement system and UV-Vis spectrometer respectively. The samples were prepared as powder and pellet at 1250 °C and 1350 °C temperatures. It was observed that samples crystallize in bixbyite structure. The band gaps of MISO samples produced at 1350 °C were found to be lower than those synthesized at 1250 °C. Electrical analyzes with four-point probes showed that the materials have n-type electrical conductivity.
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