Abstract
The I– V characteristics of the MINPN devices have been studied with the focus on the physical processes in the switchings. The study consists of computer simulation and experimental measurements, both of which show that these devices can exhibit one-state as well as two-state switchings. Such switchings are attributed to the regenerative process of the avalanche of the reverse PN junction with one or multiple current gains of the two composite NPN and MINP transistors. The MIS minority injection plays an important role in determining the switching characteristics of the device. Experimentally the breakover voltage and the hold-on voltage of this device are observed to be adjustable by applying base voltages. This can be considered as another evidence for the increased minority injection of the MIS structure.
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