Abstract
Currently, III–V metal–insulator–semiconductor field effect transistors (MISFETs) are considered to be promising device candidates for the so-called “More Moore Approach” to continue scaling CMOS transistors on the silicon platform. Strong interest also exists in III–V nanowire MISFETs as a possible candidate for a “Beyond CMOS”-type device. III–V sensors using insulator–semiconductor interfaces are good candidates for “More Moore”-type of devices on the Si platform. The success of these new approaches for future electronics depends on the availability of a surface passivation technology which can realize pinning-free, high-quality interfaces between insulator and III–V semiconductors. This paper reviews the past history, present status and key issues of the research on the surface passivation technology for III–V semiconductors. First, a brief survey of previous research on surface passivation and MISFETs is made, and Fermi level pinning at insulator–semiconductor interface is discussed. Then, a brief review is made on recent approaches of interface control for high-k III–V MIS structures. Subsequently, as an actual example of interface control, latest results on the authors’ surface passivation approach using a silicon interface control layer (Si ICL) are discussed. Finally, a photoluminescence (PL) method to characterize the interface quality is presented as an efficient contactless and non-destructive method which can be applied at each step of interface formation process without fabrication of MIS capacitors and MISFETs.
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