Abstract
We investigate the effect of diethylzinc doping on surface roughness during InAs growth on a GaAs substrate using metal-organic vapor phase epitaxy. Surface roughness was measured using atomic force microscopy and scanning electron microscopy. The surface flatness was considerably improved following the introduction of diethylzinc. Furthermore, we evaluate the Raman scattering and X-ray diffraction to investigate the crystallinity. The results confirm that diethylzinc doping effectively improves surface roughness.
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