Abstract
We investigated the growth condition of metamorphic InAs buffer on GaAs substrate by metal organic vapor phase epitaxy (MOVPE). The surface roughness of InAs measured by atomic force microscope (AFM) was improved with reducing the growth temperature. We also investigated the effect of two step growth. Two step growth is a combination of high temperature InAs buffer and low temperature InAs buffer. Surface flatness was drastically improved by this technique. Finally, we observed 3-micron wavelength range photoluminescence (PL) from InAs/GaSb superlattice grown on InAs buffer on GaAs substrate. These growth techniques are good candidate for high performance mid-infrared photonic device.
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