Growth Temperature and Sb Flow Dependence of Surface Morphology of Metamorphic InAs(Sb) on GaAs substrate Grown by MOVPE

Abstract

We investigated the growth condition of metamorphic InAs buffer on GaAs substrate by metal organic vapor phase epitaxy (MOVPE). The surface roughness of InAs measured by atomic force microscope (AFM) was improved with reducing the growth temperature. We also investigated the effect of antimony source into InAs buffer. At the temperature of 500 °C, the surface roughness was drastically improved with adding Sb source. Finally, we observed 3-micron range photoluminescence (PL) from InAs/GaSb superlattice grown on InAs(Sb) buffer on GaAs substrate. These growth techniques are good candidate for mid-infrared photonic devices.