Abstract
We investigate the effect of Zn doping on surface roughness during InAs growth on GaAs substrate by metal organic vapor phase epitaxy (MOVPE). The surface roughness was measured by atomic force microscope (AFM) and scanning electron microscope (SEM). We confirmed the Zn doping was effective to improve the surface roughness.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
