Abstract
The previous theoretical work on MBE of GaAs, which is based on the 2D-nucleation and surface diffusion, has been expanded to take into account the surface diffusion of arsenic as well as that of gallium. MBE experiments were carried out on the GaAs(001) substrates which were misoriented from (001) toward [110], [1̄10], or [100]. By measuring the critical temperature at which RHEED intensity oscillation begins to appear, the critical conditions for the mode transition were obtained. With the present theory and the experimental data, the surface diffusion length of gallium is evaluated and the origin of its anisotropic behavior of gallium is discussed.
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