Abstract
Superlattice-like film (SLF) was formed alternately by Ti0.43Sb2Te3 (TST) and TiN, and TST is employed as phase change layers and TiN is employed as isolation layers of TST film. Comparing with single TST film with the same thickness, SLF owns higher data retention, higher phase change speed (5ns) and endurance up to 1×105 cycles, and its power consumption of reset operation is significantly decreased by 65.2%. Two-dimensional thermal transient simulation of reset operation indicates that SLF-based device owns higher heating efficiency than 30-nm-thick TST-based device.
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