High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping

Abstract

Phase change materials along the GeTe-Sb isoelectronic tie line are proved to be promising host material for optimization, based on which the well-known golden composition is developed. Here, Sc doped Ge2Sb1Te2 has been proposed for phase change memory (PCM) application, showing higher thermal stability and faster operation speed than those of the golden composition. The fast speed of 40 ns, high 10-year data retention of 160 °C, and good endurance of 6×105 cycles have made Sc0.2Ge2Sb1Te2 a promising candidate for PCM application. The impact of Sc on the microstructure is believed to be essential for those improvements in PCM.