High Thermal Stability and Fast Speed Phase Change Memory by Optimizing GeTe Alloys with Ru Doping

Abstract

Phase change memory (PCM) has obvious advantages in reading, writing, fatigue characteristics and other characteristics, which make it can be a universal memory. At the same time, as a storage-level memory, PCM technology is expected to change the computer architecture and realize the integration of storage and calculation. In this paper, Ru6.8Ge50Te50 is proposed for PCM, which has achieved 144.9 °C data retention for 10 years, 6 ns operation speed. The high data retention of the phase change material is mainly due to the high coordination number of Ru and its strong bonding with Ge and Te atoms in the amorphous phase, thus enhancing the robustness of the atomic matrix. The amorphous structure model is calculated through molecular dynamics melting-quenching process, which shows that a relatively uniform amorphous phase is obtained by Ru doping. These findings proved that Ru6.8Ge50Te50 can be used as a candidate storage material for PCM.