Super-Threshold Adiabatic FinFET Circuits Based on PAL-2N Operating in Medium Strong Inversion Regions

Abstract

Lowering supply voltage of FinFET circuits is an effective way to achieve low power dissipations. In this paper, the super-threshold adiabatic FinFET circuits based on PAL-2N operating on medium strong inversion regions are addressed in terms of energy consumption and operating frequency. The supply voltage of the super-threshold circuits is much larger than the threshold voltage of the transistors, but it is lower than the normal standard supply voltage. The performance of a mode-10 FinFET PAL-2N counter is investigated with different source voltages ranging from 0.2V to 1.0V. All circuits are simulated with HSPICE at a PTM (Predictive Technology Model) 32nm FinFET technology. The simulation results show that the adiabatic FinFET circuits based on PAL-2N achieve the minimum EDP in the supply voltages of about 700mV - 800mV, the devices of which operate in medium strong inversion regions. The super-threshold adiabatic FinFET logic circuits can attain low energy consumption with favorable performance, since FinFET devices can provide better drive strength than bulk CMOS ones.