Abstract
A new FinFET-based adiabatic NAND logic circuit with Self-Adjustment of Rail Potential (SARP) is proposed. The proposed logic provides reduced power consumption when compared to conventional CMOS and adiabatic circuits. A new FinFET-based adiabatic logic is implemented based on Complementary Energy Path structure. The proposed design reduces the second-order effects, short-Channel effects occurring in Conventional CMOS circuits. The performance of the proposed SARP-FinFET-based adiabatic NAND gate is dominant when compared to the SARP-CMOS-based adiabatic NAND gate. The proposed adiabatic circuits are designed using double gate FinFET using predictive technology models (PTM) in 32 nm Technology using Synopsis HSPICE. The experimental results for the proposed adiabatic FinFET design demonstrate their effectiveness with energy consumption and power optimization.
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