Abstract
The transconductance-current ratio of the long-channel MOSFET approaches the ideal value of q/ kT under subthreshold conditions. This behavior has previously been explained using a BJT-like model. It is shown that such a model is inappropriate, and that this phenomenon can be explained by the diffusive nature of the subthreshold current, the law governing the density gradient, and the existence of a quasi high-low junction between the source region and channel. A general expression for subthreshold transconductance is developed. It is also demonstrated analytically that the bulk and inversion-layer capacitances that enter into this expression are equal at the threshold of strong inversion, a demonstration that avoids approximations employed in a previous treatment of the matter.
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