Abstract
In this study, InN films are grown at a relatively low temperature by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) on free-standing diamond substrates. Due to the high lattice mismatch rate between InN film and the free-standing diamond substrate, the function of a buffer layer is to build a bridge between the substrate and film to reduce the lattice mismatch between them. Therefore, here, we study the performance impact of introducing an InN buffer layer at various deposition temperatures and explore the optimal buffer layer deposition temperature used to grow relatively high-quality InN films. The experimental results show that when an InN buffer layer is introduced at a deposition temperature of 100 °C, the growth direction of the InN film is perpendicular to the substrate with a high c-axis preferred orientation, the roughness of the surface is minimal, and the particle sizes are consistent with growth in the same direction. Additionally, the carrier mobility is highest, and the carrier concentration is lowest compared with other conditions.
Highlights
IntroductionAs compared with other group III nitride materials such as GaN, there are relatively few studies on the growth mechanisms, optical properties, and electrical properties of InN
InN is an important group III nitride material
InN films are grown by electron cyclotron resonance (ECR)-PEMOCVD with the introduction of an InN buffer layer at various deposition temperatures
Summary
As compared with other group III nitride materials such as GaN, there are relatively few studies on the growth mechanisms, optical properties, and electrical properties of InN. Recent studies have shown that the band gap width of an InN semiconductor is 0.7 eV at a low temperature and 0.65 eV at room temperature, which is not the previous theoretical value (1.9 eV) [1,2]. InN has unique advantages in the preparation of high-speed and high-frequency transistors
Sign-in/Register to view highlights & summary 
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call